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| LESHAN RADIO COMPANY, LTD. Amplifier Transistors PNP Silicon L2N5401 L2N5401 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C mW mW/C 2N5401 150 160 5.0 600 Unit Vdc Vdc Vdc mAdc 12 TO-92 3 COLLECTOR 3 2 BASE 1 EMITTER MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2N5401 YWW THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W Y WW = Year = Work Week L2N5401-1/4 LESHAN RADIO COMPANY, LTD. L2N5401 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT 100 Cobo hfe 40 NF - 200 8.0 dB - 300 6.0 pF - MHz hFE 50 60 50 VCE(sat) - - VBE(sat) - - 1.0 1.0 0.2 0.5 Vdc - 240 - Vdc - V(BR)CEO 150 V(BR)CBO 160 V(BR)EBO ICBO - - IEBO - 50 50 50 nAdc 5.0 - - Vdc - Vdc Vdc Symbol Min Max Unit L2N5401-2/4 LESHAN RADIO COMPANY, LTD. L2N5401 200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 -55 C 30 20 VCE = - 1.0 V VCE = - 5.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 25C IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 10-1 10-2 10-3 0.3 75C REVERSE 25C FORWARD VCE = 30 V IC = ICES 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.6 0.7 Figure 3. Collector Cut-Off Region L2N5401-3/4 LESHAN RADIO COMPANY, LTD. L2N5401 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 10 20 30 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 qVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVC for VCE(sat) TJ = - 55C to 135C Figure 4. "On" Voltages Figure 5. Temperature Coefficients 10.2 V Vin 10 ms INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 mF 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout C, CAPACITANCE (pF) VBB +8.8 V VCC -30 V 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Cibo TJ = 25C Cobo Values Shown are for IC @ 10 mA 10 20 Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 50 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 10 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time L2N5401-4/4 |
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